| 摘要 |
<p>The present invention relates to an apparatus for processing a substrate which comprises: a chamber; a substrate support member; and an exhaust unit. A processing space where a semiconductor process is conducted by receiving reaction gas is formed inside the chamber. The substrate support member is installed inside the chamber, and the substrate is mounted therein. The exhaust unit encloses the substrate support member, and is equipped with a plurality of connection exhaust rings. The connection exhaust rings form a plurality of exhaust passages exhausting remaining gas and reaction by-products generated during the semiconductor process from the processing space. The connection exhaust rings are arranged to be connected to one another, and formed in a tube shape respectively enclosing the substrate support member, and form the exhaust passages by moving vertically at different heights. Each of the exhaust passages is formed as two connection exhaust rings which are adjacent to each other among the connection exhaust rings are placed apart from each other. Accordingly, the apparatus for processing a substrate can quickly discharge the remaining gas and the reaction by-products inside the chamber by using the venturi effect as the apparatus discharges the remaining gas and the reaction by-products using the exhaust passages which are narrower than the processing space.</p> |
