| 发明名称 | Semiconductor device and manufacturing method of the same | ||
| 摘要 | A protective insulation film covering a surface of a compound semiconductor region is formed to have a two-layer structure of a first insulation film and a second insulation film which have different properties. The first insulation film is a non-stoichiometric silicon nitride film while the second insulation film is a silicon nitride film in an almost stoichiometric state. | ||
| 申请公布号 | US8980768(B2) | 申请公布日期 | 2015.03.17 |
| 申请号 | US201314055321 | 申请日期 | 2013.10.16 |
| 申请人 | Fujitsu Limited | 发明人 | Makiyama Kozo |
| 分类号 | H01L21/02;C23C16/34;H01L21/318;H01L29/778;H01L29/20 | 主分类号 | H01L21/02 |
| 代理机构 | Fujitsu Patent Center | 代理人 | Fujitsu Patent Center |
| 主权项 | 1. A manufacturing method of a semiconductor device, comprising: forming a protective insulation film to have a two-layer structure constituted by a first insulation film formed into a state that a degree of chemical activity to a surface of a compound semiconductor region is high and a second insulation film stacked on the first insulation film, a chemical activity degree of the second insulation film being lower than that of the first insulation film, in forming the protective insulation film covering at least part of the surface of the compound semiconductor region, wherein the first insulation film is a silicon nitride film and includes 1.0×1022/cm3 or more Si—H bonds, or the first insulation film is a silicon nitride film and includes 1.0×1022/cm3 or more N—H bonds. | ||
| 地址 | Kawasaki JP | ||