Lateral diffusion metal oxide semiconductor (LDMOS)

摘要

A lateral diffusion metal oxide semiconductor (LDMOS) comprises a semiconductor substrate having an STI structure in a top surface of the substrate, a drift region below the STI structure, and a source region and a drain region on opposite sides of the STI structure. A gate conductor is on the substrate over a gap between the STI structure and the source region and partially overlaps the drift region. A conformal dielectric layer is on the top surface and forms a mesa above the gate conductor. The conformal dielectric layer has a conformal etch-stop layer embedded therein. Contact studs extend through the dielectric layer and the etch-stop layer, and are connected to the source region, drain region, and gate conductor. A source electrode contacts the source contact stud, a gate electrode contacts the gate contact stud, and a drain electrode contacts the drain contact stud. A drift electrode is over the drift region.

主权项

1. A device, comprising:
a semiconductor substrate having a top surface and a configuration of features, a portion of said features having a height above said top surface of said semiconductor substrate; a first conformal dielectric layer on said top surface of said semiconductor substrate and on said portion of said features above said top surface; a conformal etch-stop layer on said first conformal dielectric layer; a second conformal dielectric layer on said conformal etch-stop layer, said second conformal dielectric layer having a planarized surface above, relative to said top surface, said conformal etch-stop layer; and electrodes in said second conformal dielectric layer and on said conformal etch-stop layer, thicknesses of said electrodes being determined by said height of said features below said electrodes.