Nonvolatile memory device and method of driving the same

摘要

A nonvolatile memory device includes a plurality of memory blocks, and a pass transistor array transmitting a plurality of drive signals to a selected memory block among the plurality of memory blocks in response to a block select signal. The pass transistor array includes high voltage transistors including one common drain and two sources formed in one active region and one of the plurality of drive signals transmitted to the common drain is transmitted to different memory blocks through the two sources.

主权项

1. A nonvolatile memory device comprising:
a plurality of memory blocks; and a row decoder connected to word lines of the plurality of memory blocks, the row decoder comprising a pass transistor array transmitting a plurality of drive signals along the word lines to a selected memory block among the plurality of memory blocks in response to a block select signal, wherein the pass transistor array comprises first and second pass transistor portions respectively located adjacent first and second sides of the plurality of memory blocks, the first and second pass transistor portions respectively comprising high voltage transistors including one common drain and two sources formed in one active region and one of the plurality of drive signals transmitted to the common drain is transmitted to different memory blocks through the two sources.