发明名称 Bond pad structure
摘要 A bonding pad structure is provided that includes two conductive layers and a connective layer interposing the two conductive layers. The connective layer includes a contiguous, conductive structure. In an embodiment, the contiguous conductive structure is a solid layer of conductive material. In other embodiments, the contiguous conductive structure is a conductive network including, for example, a matrix configuration or a plurality of conductive stripes. At least one dielectric spacer may interpose the conductive network. Conductive plugs may interconnect a bond pad and one of the conductive layers.
申请公布号 US8981580(B2) 申请公布日期 2015.03.17
申请号 US201213463433 申请日期 2012.05.03
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Jeng Shin-Puu;Liu Yu-Wen;Tsai Hao-Yi;Chen Hsien-Wei
分类号 H01L23/48;H01L23/00 主分类号 H01L23/48
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A device, comprising: an integrated circuit device, comprising: a first conductive layer disposed on a substrate; a second conductive layer on the first conductive layer, electrically connected to the first conductive layer; a bond pad on the second conductive layer and providing an electrical connection to the integrated circuit device; a connective layer, interposing the first and second conductive layer, wherein the connective layer includes a contiguous, conductive structure with a planar path of the conductive material of the connective layer extending from a first lateral sidewall of the conductive layer to a second lateral sidewall of the conductive layer, wherein the planar path is substantially parallel to a top surface of the substrate and wherein the planar path of the conductive material physically contacts at least one of the second conductive layer and the first conductive layer, wherein the connective layer further includes a dielectric region surrounded by a portion of the contiguous, conductive structure, and wherein a conductive via is disposed in the dielectric region; and conductive plugs extending from the bond pad to the second conductive layer.
地址 Hsin-Chu TW