| 发明名称 |
Fin-shaped field-effect transistor (FinFET) |
| 摘要 |
A method for fabricating fin-shaped field-effect transistor (FinFET) is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure in the substrate; forming a shallow trench isolation (STI) on the substrate and around the bottom portion of the fin-shaped structure; forming a first gate structure on the STI and the fin-shaped structure; and removing a portion of the STI for exposing the sidewalls of the STI underneath the first gate structure. |
| 申请公布号 |
US8981487(B2) |
申请公布日期 |
2015.03.17 |
| 申请号 |
US201313954991 |
申请日期 |
2013.07.31 |
| 申请人 |
United Microelectronics Corp. |
发明人 |
Hung Yu-Hsiang;Fu Ssu-I;Lin Chien-Ting;Tsao Po-Chao;Chang Chung-Fu;Chen Cheng-Guo |
| 分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L27/092;H01L21/8238 |
主分类号 |
H01L29/76 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A fin-shaped field-effect transistor (FinFET), comprising:
a substrate; a fin-shaped structure on the substrate; a shallow trench isolation (STI) on the substrate and around the fin-shaped structure; and a first gate structure on the STI and the fin-shaped structure, wherein the STI under the first gate structure and the STI around the first gate structure has a step height. |
| 地址 |
Science-Based Industrial Park, Hsin-Chu TW |
