| 发明名称 |
PRECURSORS FOR THE PRODUCTION OF THIN OXIDE LAYERS AND THE USE THEREOF |
| 摘要 |
The present invention relates to new precursors in the form of metal complexes having 1,3-diketones substituted in the 2-position and a method for the production thereof. The subject matter of the invention is also that of the use thereof for producing thin metal oxide layers. The latter are components in a very wide range of electronic components and devices with different functions. |
| 申请公布号 |
WO2015032462(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
WO2014EP02140 |
申请日期 |
2014.08.04 |
| 申请人 |
MERCK PATENT GMBH |
发明人 |
BONRAD, KLAUS;SCHNEIDER, JOERG;HOFFMANN, RUDOLF;KALOUMENOS, MAREIKI |
| 分类号 |
C07F3/00;C07F5/00;C07F7/00;C07F7/22;C12P3/00;C23C16/00;C23C16/44 |
主分类号 |
C07F3/00 |
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