SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

A semiconductor memory device according to an embodiment includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a plurality of first electrodes provided on the first insulating film, a second insulating film provided on a side surface of the first electrodes and on an upper surface of the first electrodes, and a second electrode insulated from the first electrodes by the second insulating film. The second electrode includes an interconnect portion provided on the second insulating film, and a downward-extending portion extending into a space between the first electrodes from the interconnect portion. A lower end portion of the downward-extending portion is not covered with the second insulating film.

主权项

1. A semiconductor memory device, comprising:
a semiconductor substrate; a first insulating film provided on the semiconductor substrate; a plurality of first electrodes provided on the first insulating film; a second insulating film provided on a side surface of the first electrodes and on an upper surface of the first electrodes; and a second electrode insulated from the first electrodes by the second insulating film, the second electrode including:
an interconnect portion provided on the second insulating film; anda downward-extending portion extending into a space between the first electrodes from the interconnect portion, a lower end portion of the downward-extending portion not being covered with the second insulating film.