OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a crystalline oxide semiconductor film capable of being applied to a semiconductor film or the like of a transistor and also to provide the crystalline oxide semiconductor film especially having few defects of grain boundary or the like.SOLUTION: Disclosed is a crystalline oxide semiconductor film on a substrate. In the oxide semiconductor film, a place where a transmission electron diffraction pattern showing a discontinuous point is observed is equal to or less than 5 places when an observation place is one-dimensionally changed in a range of 700 nm using a transmission electron diffraction device whose probe diameter is 1 nm.