发明名称 |
SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
[Problem] To provide a semiconductor element which can be manufactured easily at low cost, can obtain a large tunnel current, and has an excellent operating characteristic, a method for manufacturing the same, and a semiconductor integrated circuit having the semiconductor element. [Solution] This semiconductor element is characterized in that all or part of a tunnel junction is composed of a semiconductor region of an indirect transition semiconductor including isoelectronic trap forming impurities. |
申请公布号 |
WO2015033706(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
WO2014JP70053 |
申请日期 |
2014.07.30 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
MORI TAKAHIRO |
分类号 |
H01L29/66;H01L21/336;H01L29/161;H01L29/20;H01L29/47;H01L29/78;H01L29/786;H01L29/872 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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