发明名称 SEMICONDUCTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 [Problem] To provide a semiconductor element which can be manufactured easily at low cost, can obtain a large tunnel current, and has an excellent operating characteristic, a method for manufacturing the same, and a semiconductor integrated circuit having the semiconductor element. [Solution] This semiconductor element is characterized in that all or part of a tunnel junction is composed of a semiconductor region of an indirect transition semiconductor including isoelectronic trap forming impurities.
申请公布号 WO2015033706(A1) 申请公布日期 2015.03.12
申请号 WO2014JP70053 申请日期 2014.07.30
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY 发明人 MORI TAKAHIRO
分类号 H01L29/66;H01L21/336;H01L29/161;H01L29/20;H01L29/47;H01L29/78;H01L29/786;H01L29/872 主分类号 H01L29/66
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