发明名称 |
TEMPERATURE SENSOR AND METHOD FOR PRODUCING SAME |
摘要 |
Provided are a temperature sensor that is hard to increase resistance in the electrode structure with respect to a Ti—Al—N thermistor material layer even under a high-temperature environment, and has a high reliability with a high heat resistance as well as a method for producing the same. The temperature sensor includes an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer. |
申请公布号 |
US2015071326(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
US201314388693 |
申请日期 |
2013.03.22 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Nagatomo Noriaki;Inaba Hitoshi;Tanaka Hiroshi |
分类号 |
G01K7/22;C23F1/38 |
主分类号 |
G01K7/22 |
代理机构 |
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代理人 |
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主权项 |
1. A temperature sensor comprising:
an insulation substrate; a thin film thermistor portion formed on the insulation substrate; and a pair of pattern electrodes formed on the insulation substrate with a pair of opposed electrode portions being arranged so as to be opposed to each other on the thin film thermistor portion, wherein the thin film thermistor portion is made of a Ti—Al—N thermistor material, and the pair of pattern electrodes has a Ti—N bonding layer formed on the thin film thermistor portion and an electrode layer made of a noble metal formed on the bonding layer. |
地址 |
Tokyo JP |