SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which can flow great current; or provide a semiconductor device which is stably driven by a high driving voltage.SOLUTION: A semiconductor device comprises: a semiconductor layer; a first electrode and a second electrode, which are electrically connected with the semiconductor layer and separated from each other in a region overlapping the semiconductor layer; a first gate electrode and a second gate electrode, which are provided across the semiconductor layer; a first gate insulation layer between the semiconductor layer and the first gate electrode; and a second gate insulation layer between the semiconductor layer and the second gate electrode. The first gate electrode is provided to overlap a part of the first electrode, the semiconductor layer and a part of the second electrode. The second gate electrode is provided to overlap a part of the first electrode and the semiconductor layer and not to overlap the second electrode.