| 摘要 |
A semiconductor storage device equipped with: a memory cell array having multiple word lines connected to multiple memory cells comprising a portion of multiple memory cells, and multiple blocks that include a group of the multiple memory cells comprising a portion of the multiple memory cells; a defect information storage block that includes multiple memory cells connected to two or more specific word lines of the multiple word lines, and that stores in these multiple memory cells defect information within the memory cell array; a first defect detection unit that reads the data of the memory cells in the defect information storage block, and determines whether there is a defect in the defect information storage block; a second defect detection unit that, when it is determined that there is a defect, changes the reading voltage level of the memory cell data and again reads the data of the memory cells in the defect information storage block, and determines whether there is a defect in the defect information storage block; and a defect determination unit that, when it is determined that there is a defect, determines that the defect information storage block is defective. |
