发明名称 PATTERNING METHOD, AND METHOD OF MANUFACTURING NONVOLATILE STORAGE DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a patterning method for simplifying the manufacturing process by forming grooves of different pattern, respectively, in two laminated layers collectively, and to provide a method of manufacturing a nonvolatile storage device using the same.SOLUTION: In a patterning method, a first layer and a second layer provided selectively on the first layer are etched selectively by using a mask covering them, thus forming grooves for dividing the first and second layers, respectively. The mask has a first part and a second part formed on the first layer. The first part has a first extension extending over the second layer toward the second part. The second part has a second extension extending over the second layer toward the first part.
申请公布号 JP2015046425(A) 申请公布日期 2015.03.12
申请号 JP20130175485 申请日期 2013.08.27
申请人 TOSHIBA CORP 发明人 AKUTSU YOSHIHIRO;KITO MASARU;UENAKA TSUNEO;IGUCHI SUNAO
分类号 H01L21/8247;H01L21/336;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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