SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, POWER CONVERSION APPARATUS, THREE-PHASE MOTOR SYSTEM, AUTOMOBILE, AND RAIL VEHICLE

摘要

The present invention addresses the problem of providing a technology whereby withstand voltage fluctuation is suppressed, and an area of an end structure is reduced in a semiconductor device having a silicon carbide device. In order to solve the problem, in this semiconductor device having a silicon carbide device, a bonding end section is provided with a p-type first region and a p-type second region that is provided further toward the outer circumferential side than the first region. The first region is provided with a first concentration gradient, and the second region is provided with a second concentration gradient that is larger than the first concentration gradient.