发明名称 MANUFACTURING METHOD OF WIDE-BANDGAP SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE, AND WIDE-BANDGAP SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a wide-bandgap semiconductor device capable of improving manufacturing yield of a semiconductor module.SOLUTION: A manufacturing method of a wide-bandgap semiconductor device comprises: a step of preparing a wide-bandgap semiconductor substrate; a step of dividing the wide-bandgap semiconductor substrate into a plurality of first semiconductor chips 80; a step of fixing the plurality of first semiconductor chips 80 to a fixing member 70; a step of measuring a withstand voltage of the first semiconductor chips 80 while at least the first semiconductor chips 80 are immersed in an inert fluid 91; a step of cutting the fixing member 70 after the step of measuring the withstand voltage of the first semiconductor chips 80 so as to obtain a plurality of second semiconductor chips in which the first semiconductor chip 80 is fixed to pieces of the fixing member 70 thus cut.
申请公布号 JP2015046491(A) 申请公布日期 2015.03.12
申请号 JP20130176884 申请日期 2013.08.28
申请人 SUMITOMO ELECTRIC IND LTD 发明人 SAKAI MITSUHIKO
分类号 H01L21/336;G01R31/28;H01L21/52;H01L29/12;H01L29/78 主分类号 H01L21/336
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