发明名称 |
MANUFACTURING METHOD OF WIDE-BANDGAP SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE, AND WIDE-BANDGAP SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MODULE |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a wide-bandgap semiconductor device capable of improving manufacturing yield of a semiconductor module.SOLUTION: A manufacturing method of a wide-bandgap semiconductor device comprises: a step of preparing a wide-bandgap semiconductor substrate; a step of dividing the wide-bandgap semiconductor substrate into a plurality of first semiconductor chips 80; a step of fixing the plurality of first semiconductor chips 80 to a fixing member 70; a step of measuring a withstand voltage of the first semiconductor chips 80 while at least the first semiconductor chips 80 are immersed in an inert fluid 91; a step of cutting the fixing member 70 after the step of measuring the withstand voltage of the first semiconductor chips 80 so as to obtain a plurality of second semiconductor chips in which the first semiconductor chip 80 is fixed to pieces of the fixing member 70 thus cut. |
申请公布号 |
JP2015046491(A) |
申请公布日期 |
2015.03.12 |
申请号 |
JP20130176884 |
申请日期 |
2013.08.28 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
SAKAI MITSUHIKO |
分类号 |
H01L21/336;G01R31/28;H01L21/52;H01L29/12;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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