| 摘要 |
<p>#CMT# #/CMT# The substrate (100) has four doped zones (1-4) forming a P-N junction (101), where the first doped zone is doped with N-type doping, and the second and third doped zones are doped with P-type doping. The third doped zone is located between the first doped zone and the second doped zone, where concentration of a doping element of the third zone is lower than concentration of doping elements of the first and second doped zones. Concentration of a doping element of the fourth zone is greater than the highest concentration of the doping element of the first zone. #CMT#USE : #/CMT# Semiconductor substrate. #CMT#ADVANTAGE : #/CMT# The substrate has four doped zones forming the P-N junction, and the doped zones of the substrate are formed from doped silicon material, thus ensuring better electrical insulation at high voltage, and reducing or preventing the electrical breakdown of the P-N junction from damaging the active components located close to that of the P-N junction. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a partial vertical sectional view of a semiconductor substrate comprising a P-N junction. 1-4 : Doped zones 1a, 1b, 2a, 2b, 4a, 4b : Ends of doped zones 4A, 4B : Doped zone portions 100 : Semiconductor substrate 101 : P-N junction.</p> |
