发明名称 REVERSED STACK MTJ
摘要 An integrated circuit device includes a substrate and a magnetic tunneling junction (MTJ). The MTJ includes at least a pinned layer, a barrier layer, and a free layer. The MTJ is formed on the surface of the substrate. Of the pinned layer, the barrier layer, and the free layer, the free layer is formed first and is closest to the surface. This enables a spacer to be formed on a peripheral region of the free layer prior to etching the free layer. Any damage to the free layer that results from etching or other free layer edge-defining processes is kept at a distance from the tunneling junction by the spacer.
申请公布号 KR20150026828(A) 申请公布日期 2015.03.11
申请号 KR20140102424 申请日期 2014.08.08
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 HUANG WEI HANG;SUNG FU TING;HSU CHERN YOW;LIU SHIH CHANG;TSAI CHIA SHIUNG
分类号 H01L43/08 主分类号 H01L43/08
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