发明名称 Charge storage circuit for a pixel, and a display
摘要 A charge storage circuit for a pixel comprises a charge storage node. First and second series-connected transistors (8,10) are provided for selectively isolating the charge storage node from a first voltage input (9,SL) for supplying a data voltage. The circuit is provided with a voltage follower circuit for replicating a voltage at the charge storage node (12) at another node in the circuit thereby to reduce the drain-source voltage across the second transistor (10). The first transistor forms part of the voltage follower circuit.
申请公布号 US8976099(B2) 申请公布日期 2015.03.10
申请号 US201113151445 申请日期 2011.06.02
申请人 Sharp Kabushiki Kaisha 发明人 Shah Sunay;Zebedee Patrick;Hadwen Benjamin James;Brownlow Michael James
分类号 G09G3/36;G06F3/038 主分类号 G09G3/36
代理机构 Renner, Otto, Boisselle & Sklar, LLP. 代理人 Renner, Otto, Boisselle & Sklar, LLP.
主权项 1. A charge storage circuit for a pixel, the circuit comprising: a charge storage node; first and second transistors for selectively isolating the charge storage node from a first voltage input for supplying a data voltage, the first and second transistors being series-connected; a voltage follower circuit for replicating a voltage at the charge storage node at another node in the circuit thereby to reduce the drain-source voltage across the second transistor; and a third transistor connected between (i) a second voltage input and (ii) a first node between the first transistor and the second transistor, a gate of the third transistor being connected to the charge storage node, the voltage follower circuit comprising the first transistor and the third transistor, where in a voltage holding mode the first transistor and the third transistor pass the same current.
地址 Osaka JP
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