发明名称 |
Charge storage circuit for a pixel, and a display |
摘要 |
A charge storage circuit for a pixel comprises a charge storage node. First and second series-connected transistors (8,10) are provided for selectively isolating the charge storage node from a first voltage input (9,SL) for supplying a data voltage. The circuit is provided with a voltage follower circuit for replicating a voltage at the charge storage node (12) at another node in the circuit thereby to reduce the drain-source voltage across the second transistor (10). The first transistor forms part of the voltage follower circuit. |
申请公布号 |
US8976099(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US201113151445 |
申请日期 |
2011.06.02 |
申请人 |
Sharp Kabushiki Kaisha |
发明人 |
Shah Sunay;Zebedee Patrick;Hadwen Benjamin James;Brownlow Michael James |
分类号 |
G09G3/36;G06F3/038 |
主分类号 |
G09G3/36 |
代理机构 |
Renner, Otto, Boisselle & Sklar, LLP. |
代理人 |
Renner, Otto, Boisselle & Sklar, LLP. |
主权项 |
1. A charge storage circuit for a pixel, the circuit comprising:
a charge storage node; first and second transistors for selectively isolating the charge storage node from a first voltage input for supplying a data voltage, the first and second transistors being series-connected; a voltage follower circuit for replicating a voltage at the charge storage node at another node in the circuit thereby to reduce the drain-source voltage across the second transistor; and a third transistor connected between (i) a second voltage input and (ii) a first node between the first transistor and the second transistor, a gate of the third transistor being connected to the charge storage node, the voltage follower circuit comprising the first transistor and the third transistor, where in a voltage holding mode the first transistor and the third transistor pass the same current. |
地址 |
Osaka JP |