Method of manufacturing a memory device using fine patterning techniques

摘要

According to one embodiment, a method of manufacturing a device, includes forming a first core including a line portion extending between first and second regions and having a first width and a fringe having a dimension larger than the first width, forming a mask on the fringe and on a first sidewall on the first core, removing the first core so that a remaining portion having a dimension larger than the first width is formed below the mask, forming a second sidewall on a pattern corresponding the first sidewall and the remaining portion, the second sidewall having a second width less than the first width and facing a first interval less than the first width in the first region and facing a second interval larger than the first interval in the second region.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a first layer to be processed on a first region and a second region of a semiconductor substrate; forming a first core material above the first layer, the first core material including a line portion extending in a first direction from the first region toward the second region and having a first line width in a second direction perpendicular to the first direction and a fringe connected to the line portion in the second region and having a first dimension larger than the first line width; forming a first sidewall film having the first line width on a side face of the first core material so as to surround the side face of the first core material; forming a first mask covering at least a portion of the first sidewall film and at least a portion of the fringe; removing the first core material so that a first remaining portion having a second dimension larger than the first line width is formed below the first mask, the first remaining portion including at least one of the first core material and the first sidewall film; forming a second sidewall film on the side face of a first pattern so as to surround the first pattern corresponding to a pattern of the first sidewall film and a pattern of the first remaining portion, the second sidewall film having a second line width equal to the first line width or less and facing each other with a first interval equal to the first line width or less in the first region and facing each other with a second interval larger than the first interval in the second region; and after the first pattern being removed, forming a plurality of interconnects having the second line width, adjacent to each other in the first region with the first interval, and adjacent to each other in the second region with the second interval by processing the first layer using the second sidewall film as a mask.