发明名称 |
Dual work function FinFET structures and methods for fabricating the same |
摘要 |
A method for fabricating a dual-workfunction FinFET structure includes depositing a first workfunction material in a layer in a plurality of trenches of the FinFET structure, depositing a low-resistance material layer over the first workfunction material layer, and etching the low-resistance material layer and the first workfunction material layer from a portion of the FinFET structure. The method further includes depositing a second workfunction material in a layer in a plurality of trenches of the portion and depositing a stress material layer over the second workfunction material layer. |
申请公布号 |
US8975141(B2) |
申请公布日期 |
2015.03.10 |
申请号 |
US201213563202 |
申请日期 |
2012.07.31 |
申请人 |
GLOBALFOUNDRIES, Inc. |
发明人 |
Wei Andy C.;Yang Bin;Tambwe Francis M. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
Ingrassia Fisher & Lorenz, P.C. |
代理人 |
Ingrassia Fisher & Lorenz, P.C. |
主权项 |
1. A method for fabricating a dual-workfunction FinFET structure, comprising:
depositing an n-type workfunction material in a layer over a plurality of gate structures of each a PMOS and an NMOS and in a plurality of trenches between said gate structures; depositing a low-resistance material layer over the n-type workfunction material layer; depositing a deep ultraviolet light-absorbing oxide (DUOS material layer over the plurality of gate structures of the NMOS; etching the low-resistance material layer and the n-type workfunction material layer from the PMOS; etching the DUO material layer from over the NMOS; depositing a p-type workfunction material in a layer over the plurality of gate structures of the PMOS and in the plurality of trenches between said gate structures of the PMOS; and depositing a compressive stress material layer over the p-type workfunction material layer. |
地址 |
Grand Cayman KY |