Thin film transistor, array substrate and preparation method thereof

摘要

One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner.

主权项

1. A preparation method for a thin film transistor comprising:
preparing a gate electrode and a gate insulating layer on a base substrate, preparing an active layer on the gate insulating layer, and preparing an ohmic contact layer, a source electrode, a drain electrode and a passivation layer on the active layer, wherein the active layer comprises an active layer lower portion that contacts the gate insulating layer and an active layer upper portion that is in direct contact with the ohmic contact layer, and preparing of the active layer on the gate insulating layer comprises: using a layer-by-layer growing process to prepare at least two layers of amorphous silicon thin film which are each treated by hydrogen plasma layer by layer to obtain microcrystalline silicon so as to form the active layer lower portion, and using a successive deposition process to prepare microcrystalline silicon so as to form the active layer upper portion.