| 摘要 |
<p>A light emitting device according to an embodiment of the invention comprises: a substrate; a graphene pattern formed on the substrate; and a gallium nitride layer grown on the substrate and the graphene pattern, wherein a ratio of an area of the graphene pattern with respect to an area of the substrate lies between 60 and 70 %. When manufacturing a light emitting diode (LED) element, a graphene layer with a high terminal conductivity is formed between a GaN layer and a sapphire substrate, such that heat generated in the LED is effectively transferred to outside thereby improving a heat release efficiency and characteristics of the LED element.</p> |
