发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To reduce the cost of processing an external lead-out terminal by a press, improve the formability of a block part of an enclosure case, and secure a free space beneath the block part of the enclosure case.SOLUTION: Provided is a power semiconductor module 100 of doubler type comprising an enclosure case 6 into which a plurality of external lead-out terminals 6a, 6b, 6c formed by press-working of a metal material are inserted, the enclosure case 6 being formed by molding an electrically insulating resin material and diode chips 3a, 3b. A connection part 6a5 of the external lead-out terminal 6a is formed in shape of a circular arc cylinder, and the whole of an inner circumferential face 6a5a and an outer circumferential face 6a5b is covered by a block part 6g1 of the enclosure case 6. An underside 6g1b of the block part 6g1 is set to a position lower than an underside 6a2b of an upper horizontal portion 6a2 of the external lead-out terminal 6a, and a right edge part 6a2b1b and a left edge part 6a2b1c of an adjacent portion 6a2b1 beneath the upper horizontal portion 6a2 are covered by the block part 6g1, a central part 6a2b1a of the adjacent portion 6a2b1 being exposed without being covered by the block part 6g1.
申请公布号 JP2015043396(A) 申请公布日期 2015.03.05
申请号 JP20130175020 申请日期 2013.08.26
申请人 NIPPON INTER ELECTRONICS CORP 发明人 INAGE HIKOFUMI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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