STRUCTURE AND METHOD FOR HIGH PERFORMANCE MULTI-PORT INDUCTOR

摘要

A multi-port inductor structure for use in semiconductor applications such as high-performance RF filters and amplifiers is provided. Embodiments of the present invention may provide 3 metallization layers and two via layers. The metallization layers and via layers may be substantially stacked on top of each other to conserve space. Each metallization layer comprises a ring pattern. In embodiments, the top two ring patterns include a plurality of concentric bands, forming a spiral pattern. The third (bottom) ring may include a broken ring pattern. In embodiments, the second (middle) ring may include one or more spans to facilitate connection to the inner bands of the second ring. The spans connect inner bands to an outer perimeter region of the second ring. Multiple tap points along the bands and spans allow multiple inductance values to be obtained from the structure.

主权项

1. A multi-port inductor structure, comprising:
a plurality of metal layers, formed into a plurality of concentric bands; a plurality of via layers connecting the metal layers; a plurality of underpass connections connecting one or more concentric bands from the plurality of concentric bands to an outer perimeter of the multi-port inductor structure;wherein the plurality of concentric bands each have a width that decreases inwardly within the structure, and wherein an interspacing distance between concentric bands increases inwardly within the structure.