| 摘要 |
Disclosed is a light-emitting element according to an embodiment, comprising: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a light extractor arranged on the light-emitting structure, the light extractor comprising: a first nitride semiconductor layer with a first wet etch rate, arranged on the first conductive semiconductor layer, a second nitride semiconductor layer with a second wet etch rate, arranged on the first nitride semiconductor layer, and a third nitride semiconductor layer with a third wet etch rate, wherein the first and third wet etch rates are lower than the second wet etch rate. |
