DUAL DISCHARGE MODES OPERATION FOR REMOTE PLASMA

摘要

Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

主权项

1. A method of processing a semiconductor substrate, the method comprising:
flowing a gas through a cavity defined by a powered electrode; applying a negative voltage to the powered electrode; striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas; flowing the hollow cathode discharge effluents to a processing region through a plurality of apertures defined by an electrically grounded electrode; and reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.