发明名称 METHOD FOR PRODUCING A SOLAR CELL
摘要 The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the surface of the substrate and an antireflection layer applied to the silicon oxide layer, which antireflection layer is deposited onto the dielectric passivation layer in a process chamber. According to the invention, in order to achieve a stability of corresponding solar cells or solar cell modules produced therefrom against a potential induced degradation (PID), the dielectric passivation layer is formed from the surface of the substrate in the process chamber by means of a plasma containing an oxidizing gas.
申请公布号 US2015064835(A1) 申请公布日期 2015.03.05
申请号 US201314380591 申请日期 2013.02.22
申请人 FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V. 发明人 Moschner Jens Dirk;Nagel Henning;Lachowicz Agata;Fiedler Markus
分类号 H01L31/18 主分类号 H01L31/18
代理机构 代理人
主权项 1. Method for producing a solar cell with a substrate consisting of silicon with a dielectric passivation layer present on the surface of the substrate, in the form of a silicon oxide layer, and of a layer applied thereon, such as an antireflection layer which is deposited in a processing space, preferably by means of a PECVD process, on the dielectric passivation layer, characterized in that the dielectric passivation layer is formed from the surface of the substrate in the processing space by means of an at least partially dissociated, oxidizing gas, such as by means of a plasma containing an oxidizing gas, or in that the dielectric passivation layer is formed from the surface of the substrate in a preliminary processing space upstream of the processing space, in the presence of an oxidizing gas, wherein the substrate is exposed in the preliminary processing space to a temperature T where T≧250° C., in particular T≧400° C., for a time period t at an oxygen partial pressure of at least 100 Pa, in particular at least 1 kPa.
地址 Munchen DE
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