主权项 |
1. Method for producing a solar cell with a substrate consisting of silicon with a dielectric passivation layer present on the surface of the substrate, in the form of a silicon oxide layer, and of a layer applied thereon, such as an antireflection layer which is deposited in a processing space, preferably by means of a PECVD process, on the dielectric passivation layer,
characterized in that the dielectric passivation layer is formed from the surface of the substrate in the processing space by means of an at least partially dissociated, oxidizing gas, such as by means of a plasma containing an oxidizing gas, or in that the dielectric passivation layer is formed from the surface of the substrate in a preliminary processing space upstream of the processing space, in the presence of an oxidizing gas, wherein the substrate is exposed in the preliminary processing space to a temperature T where T≧250° C., in particular T≧400° C., for a time period t at an oxygen partial pressure of at least 100 Pa, in particular at least 1 kPa. |