| 摘要 |
The present invention relates to a plasma processing apparatus. The present invention alleviates the density difference of plasma corresponding to the arrangement of an opening unit of a high frequency electrodes forming an antenna without making a distance between the antenna and the substrate be long so as to increase the uniformity of substrate processing for the longitudinal direction of the antenna. The antenna (28) has a structure for containing a high frequency electrode within a dielectric case (40). A high frequency electrode (30) is arranged in parallel to open a gap between two electrode conductors (31, 32) to form the two electrode conductors in a sphere plate shape, and ends in a longitudinal direction of positive electrode conductors (31, 32) have a reciprocation conductive structure to be connected to a conductor. A high frequency current flows through the positive electrode conductors (31, 32) in a reverse direction, and an opening unit (37) is formed on a gap sidewall of the positive electrode conductors (31, 32) and arranges to be distributed in a longitudinal direction of the high frequency electrode (30). The antenna (28) is arranged to be de facto vertical with the main surface of the high frequency electrode (30) and the surface of a substrate (2) within a vacuum container (4). |
