| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of forming a high-accurate pattern image with a uniform thickness which is suitable to source/drain electrodes of an organic thin film transistor. <P>SOLUTION: A pattern image forming method comprises a step of coating, on a substrate, pattern image lower layer film forming liquid containing at least one kind of polymer selected from the group consisting of polyimide precursor having a specific structure unit and polyimide achieved by dehydrating and ring-closing the polyimide precursor and performing drying and burning to acquire a pattern image lower layer film, a step of irradiating the achieved pattern image lower layer film with ultraviolet ray to vary wettability of the patter image lower layer film, and a step of relatively moving the pattern image lower layer film and a blade to which the pattern image forming liquid adheres, thereby coating the pattern image forming liquid in an ultraviolet ray irradiated area of the pattern image lower layer film and drying the pattern image forming liquid. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
