| 摘要 |
<p>The present invention relates to an arc chamber for an ion source head of an ion implantation device capable of saving time and manpower required for production by separating a floor plate and wall frames of four sides and assembling it easily stably. The act chamber comprises; a floor plate wherein a connection hole connected with a gas supply pipe is formed and a pair of first assembling pins which are separated is installed on the top of front and rear sides; a front side plate which is assembled to the top of the front side of the floor plate and forms an installation hole so that a repeller is penetrated and forms a pair of first insertion grooves on the upper and lower sides of the front sides to face the first assembling pins located on the top of the front side of the floor plate and forms a pair of first vertical grooves vertically on both sides of the rear side; a rear side plate which is assembled to the top of the rear side of the floor plate and forms a penetration hole so that a filament is penetrated and forms a pair of second insertion grooves on the upper and lower sides of the rear side to face the first assembling pin located on the top of the rear side of the floor plate and forms a pair of second vertical groove vertically on both sides of the front side to face the first vertical groove; a pair of side plates which are fitted between the first and second vertical grooves; and a top cover which is closely arranged on the top of the front side plate, the rear side plate, and the side plates and has an ion discharge hole in which an ion is discharged. A pair of second assembling pins is installed on the lower side of the front and rear sides of the top cover to be fitted between the first and second insertion grooves.</p> |
