发明名称 |
Epitaxial substrate and method for manufacturing epitaxial substrate |
摘要 |
Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes: a (111) single crystal Si substrate and a buffer layer formed of a plurality of lamination units being continuously laminated. The lamination unit includes: a composition modulation layer formed of a first and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein; a termination layer formed on an uppermost portion of the composition modulation layer, the termination layer acting to maintain the compressive strain existing in the composition modulation layer; and a strain reinforcing layer formed on the termination layer, the strain reinforcing layer acting to enhance the compressive strain existing in the composition modulation layer. |
申请公布号 |
US8969880(B2) |
申请公布日期 |
2015.03.03 |
申请号 |
US201213705554 |
申请日期 |
2012.12.05 |
申请人 |
NGK Insulators, Ltd. |
发明人 |
Miyoshi Makoto;Sumiya Shigeaki;Ichimura Mikiya;Maehara Sota;Tanaka Mitsuhiro |
分类号 |
H01L29/20;H01L21/02;H01L29/10;H01L29/15;H01L29/778 |
主分类号 |
H01L29/20 |
代理机构 |
Burr & Brown, PLLC |
代理人 |
Burr & Brown, PLLC |
主权项 |
1. An epitaxial substrate in which a group of group-III nitride layers are formed on a base substrate made of (111)-oriented single crystal silicon such that a (0001) crystal plane of said group of group-III nitride layers is in parallel with the (111) plane of said base substrate, said epitaxial substrate comprising a buffer layer formed of a plurality of lamination units being continuously laminated; and
a crystal layer formed on said buffer layer, each of said lamination units including:
a composition modulation layer formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated such that a compressive strain exists therein;a termination layer formed on an uppermost portion of said composition modulation layer, said termination layer acting to maintain said compressive strain existing in said composition modulation layer; anda strain reinforcing layer formed on said termination layer, said strain reinforcing layer acting to enhance said compressive strain existing in said composition modulation layer. |
地址 |
Nagoya JP |