| 发明名称 | Methods of forming a pattern on a substrate | ||
| 摘要 | A method of forming a pattern on a substrate includes forming spaced first features derived from a first lithographic patterning step. Sidewall spacers are formed on opposing sides of the first features. After forming the sidewall spacers, spaced second features derived from a second lithographic patterning step are formed. At least some of individual of the second features are laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features. After the second lithographic patterning step, all of only some of the sidewall spacers in said at least one cross-section is removed. | ||
| 申请公布号 | US8969214(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201313893546 | 申请日期 | 2013.05.14 |
| 申请人 | Micron Technology, Inc. | 发明人 | Light Scott L.;Armstrong Kyle;Hyatt Michael D.;Sipani Vishal |
| 分类号 | H01L21/302;H01L21/308 | 主分类号 | H01L21/302 |
| 代理机构 | Wells St. John, P.S. | 代理人 | Wells St. John, P.S. |
| 主权项 | 1. A method of forming a pattern on a substrate, comprising: forming spaced first features derived from a first lithographic patterning step; forming sidewall spacers on opposing sides of the first features; after forming the sidewall spacers, forming spaced second features derived from a second lithographic patterning step; at least some of individual of the second features being laterally between and laterally spaced from immediately adjacent of the first features in at least one straight-line vertical cross-section that passes through the first and second features; and after the second lithographic patterning step, removing all of only some of the sidewall spacers in said at least one cross-section, and forming the second features to be taller than the first features after the removing. | ||
| 地址 | Boise ID US | ||