Single poly plate low on resistance extended drain metal oxide semiconductor device

摘要

A semiconductor device, in particular, an extended drain metal oxide semiconductor (ED-MOS) device, defined by a doped shallow drain implant in a drift region. For example, an extend drain n-channel metal oxide semiconductor (ED-NMOS) device is defined by an n doped shallow drain (NDD) implant in the drift region. The device is also characterized by conductive layer separated from a substrate in part by a thin oxide layer and in another part by a thick/thin oxide layer. A method of fabricating a semiconductor device, in particular an ED-NMOS device, having a doped shallow drain implant of a drift region is also provided. A method is also provided for fabricating conductive layer disposed in part across a thin oxide layer and in another part across a thick/thin oxide layer.

主权项

1. A semiconductor device comprising:
a substrate; a well disposed in the substrate; a doped shallow drain implant disposed in the well substantially across a drift region; a conductive layer separated from the substrate in part by a thin oxide layer and in another part by a thick/thin oxide layer; and a high temperature oxide (HTO) layer disposed substantially across the thick/thin oxide layer.