| 发明名称 | Light emitting diode and forming method thereof | ||
| 摘要 | A light emitting diode (LED) and a forming method thereof are provided. The method for forming the LED includes: providing a semiconductor substrate (20) and a sapphire substrate (30) respectively, wherein a first bonding layer (21) is formed on the silicon substrate (20), and a sacrificial layer (32), an LED die (33) and a second bonding layer (35) are formed in turn on the sapphire substrate (30); bonding the first bonding layer (21) and the second bonding layer (35); removing the sacrificial layer (32) and lifting off the sapphire substrate (30). The method increases the effective lighting area of the LED, improves heat radiation, and enhances lighting efficiency. | ||
| 申请公布号 | US8969108(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201113881723 | 申请日期 | 2011.02.10 |
| 申请人 | Enraytek Optoelectronics Co., Ltd. | 发明人 | Xiao Deyuan;Chang Richard Rugin |
| 分类号 | H01L29/06;H01L33/64;H01L33/00;H01L21/20 | 主分类号 | H01L29/06 |
| 代理机构 | Faegre Baker Daniels LLP | 代理人 | Faegre Baker Daniels LLP |
| 主权项 | 1. A method for forming a light emitting diode, comprising: providing a semiconductor substrate; forming a first bonding layer on the semiconductor substrate; providing a sapphire substrate; forming a sacrificial layer, a light emitting diode die and a second bonding layer successively on the sapphire substrate; bonding the first bonding layer and the second bonding layer; and removing the sacrificial layer and peeling the sapphire substrate. | ||
| 地址 | Shanghai CN | ||