发明名称 Process for producing bismuth-antimony single-crystal semimetals
摘要 <p>The invention relates to the semimetal production technology, in particular to processes for producing single-crystal semimetals from semiconductors.The process for producing bismuth-antimony single-crystal semimetals comprises the smooth elastic extension of a bismuth-antimony single-crystal semiconductor wire with the antimony concentration of 7.5 at. % using an extension device, while concomitantly measuring the electrical resistance of the wire at the room temperature to the attainment of plastic extension.</p>
申请公布号 MD886(Y) 申请公布日期 2015.02.28
申请号 MDS20130055 申请日期 2013.03.21
申请人 INSTITUTUL DE INGINERIE ELECTRONICA SI NANOTEHNOLOGII "D. GHITU" AL ASM 发明人 NIKOLAEVA ALBINA;BODIUL PAVEL;KONOPKO LEONID;POPOV ION;MOLOSNIC EVGHENII
分类号 C30B33/00;C01G29/00;C01G30/00;G01N27/00;G01N27/02 主分类号 C30B33/00
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