| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve low threshold value and high withstand voltage without providing a Schottky electrode.SOLUTION: A semiconductor device comprises: an Ntype cathode layer 1 formed by being joined to a cathode electrode 100; an N type drift layer 2 which has a low impurity concentration and is formed by being joined to the cathode layer 1; a plurality of trenches 4a, 4b arranged at predetermined intervals on an upper surface of a drift layer 2; embedded electrodes 5a, 5b formed inside the trenches 4a, 4b via insulation films 6a, 6b, respectively; in inter-trench region 7 formed between the neighboring trenches; and a universal contact layer 3 in which high impurity concentration Players 31 and high impurity concentration Nlayers 32 are alternately arranged and joined to an anode electrode 200, and which is formed by being joined to the inter-trench region 7. Potential in a thermal equilibrium state of the inter-trench region 7 is adjusted and a difference with potential in a thermal equilibrium state of the drift layer 2 is lower than a built-in voltage which depends on a band gap of a semiconductor material to be used. |
