PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A photoelectric conversion device having a new anti-reflection structure is provided. A photoelectric conversion device includes a first-conductivity-type crystalline semiconductor region that is provided over a conductive layer; a crystalline semiconductor region that is provided over the first-conductivity-type crystalline semiconductor region and has an uneven surface by including a plurality of whiskers including a crystalline semiconductor; and a second-conductivity-type crystalline semiconductor region that covers the uneven surface of the crystalline semiconductor region having the uneven surface, the second conductivity type being opposite to the first conductivity type. In the photoelectric conversion device, a concentration gradient of an impurity element imparting the first conductivity type is formed from the first-conductivity-type crystalline semiconductor region toward the crystalline semiconductor region having the uneven surface.

主权项

1. A photoelectric conversion device comprising:
a first crystalline semiconductor region; a second crystalline semiconductor region over the first crystalline semiconductor region; and a third crystalline semiconductor region over the second crystalline semiconductor region, wherein the first crystalline semiconductor region includes a first impurity element of a first conductivity type, wherein the second crystalline semiconductor region comprises a plurality of whiskers, wherein a surface of the third crystalline semiconductor region is uneven, and wherein a concentration gradient of the first impurity element of the first conductivity type is formed from the first crystalline semiconductor region toward the second crystalline semiconductor region.