发明名称 APPARATUSES HAVING A VERTICAL MEMORY CELL
摘要 Methods, apparatuses, and systems for providing a body connection to a vertical access device. The vertical access device may include a digit line extending along a substrate to a digit line contact pillar, a body connection line extending along the substrate to a body connection line contact pillar, a body region disposed on the body connection line, an electrode disposed on the body region, and a word line extending to form a gate to the body region. A method for operation includes applying a first voltage to the body connection line, and applying a second voltage to the word line to cause a conductive channel to form through the body region. A memory cell array may include a plurality of vertical access devices.
申请公布号 US2015054063(A1) 申请公布日期 2015.02.26
申请号 US201414517261 申请日期 2014.10.17
申请人 Micron Technology, Inc. 发明人 Karda Kamal M.;Gupta Rajesh N.;Pulugurtha Srinivas;Mouli Chandra V.;Mueller Wolfgang
分类号 H01L29/78 主分类号 H01L29/78
代理机构 代理人
主权项 1. An semiconductor device, comprising: a vertical memory cell having a body region disposed on a digit line; and a word line forming a gate for the body region, and including a saddle region having a portion extending below the body region.
地址 Boise ID US