| 发明名称 |
TRANSISTOR HAVING AN OHMIC CONTACT BY GRADIENT LAYER AND METHOD OF MAKING THE SAME |
| 摘要 |
A transistor includes a substrate, a channel layer over the substrate and an active layer over the channel layer. The active layer includes a gradient having a first concentration of a first material at an interface with the channel layer and a second concentration of the first material at a surface opposite the channel layer, and the first concentration is higher than the second concentration. |
| 申请公布号 |
US2015053991(A1) |
申请公布日期 |
2015.02.26 |
| 申请号 |
US201314010268 |
申请日期 |
2013.08.26 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHIANG Chen-Hao;LIU Po-Chun;CHEN Chi-Ming;YU Chung-Yi;TSAI Chia-Shiung;CHEN Xiaomeng |
| 分类号 |
H01L29/778;H01L29/20;H01L29/66;H01L29/205 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A transistor comprising:
a substrate; a channel layer over the substrate; an active layer over the channel layer, wherein the active layer comprises a gradient layer having a first concentration of a first material at an interface with the channel layer and a second concentration of the first material at a surface opposite the channel layer, and the first concentration is higher than the second concentration, wherein the first concentration steadily decreases from the first value at the interface to the second value at the surface opposite the channel layer. |
| 地址 |
Hsinchu TW |
