| 摘要 |
<p>A method for manufacturing a polycrystalline silicon ingot includes unidirectionally solidifying a molten silicon upwardly from the bottom of a crucible, wherein the crucible is provided with silica deposited on the bottom of the crusible; and then dividing the degree of solidification in the crucible into a first zone from 0 mm to X in height (10 mm≰X<30 mm), a second zone from X to Y in height (30 min≰Y<100 mm) and a third zone of Y or more in height, based on the bottom of the crucible, wherein a solidification rate V1 in the first zone is set in the range of 10 mm/h≰V1≰20 mm/h and a solidification rate V2 in the second zone is set in the range of 1 mm/h≰V2≰5 mm/h.</p> |
