| 摘要 |
<p>A photoelectric device comprises: a first electrode; a second electrode; a semiconductor material arranged between the first electrode and the second electrode; and an electrical insulation bank structure which defines a well surrounding a surface layer region including the first electrode. An apparatus including an optical cavity comprises: a full light reflection layer; a partial light reflection layer; a semiconductor material; and at least one solution process-enabled layer including the semiconductor material arranged between the full light reflection layer and the partial light reflection layer. The surface layer region includes one of the reflection layers, and the solution process-enabled layer is arranged on the surface layer region and first and second slopes of a sidewall. The full reflection layer and the partial reflection layer are arranged to provide a resonance cavity for the light emitted from the layer structure. The sidewall has the first slope extending from the surface layer region and the steeper second slope extending from the first slope. A full width at half maximum of a histogram at a thickness of that of at least one layer in the layer structure is smaller than 5 nm, and the thickness is at least arranged on individual points which are substantially regularly spaced from one another on the surface layer region. The points have a first point residing on a boundary between the surface layer region and the sidewall and a second point which are spaced from the boundary by at least 10 microns. According to the present invention, provided is an improved structure for storing various fluids in the well.</p> |
