| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device and a semiconductor device for decreasing resistance at a channel portion and lowering a threshold voltage without an epitaxial growth process, limitation on a taper angle of a trench and limitation of a substrate. <P>SOLUTION: A MOSFET as a semiconductor device is manufactured by the steps of forming a channel layer 14 by performing ion implantation of an n type impurity using a silicon oxide layer 25 as an implantation mask opening in such a way as to expose a predetermined portion of a source region 14 where a trench is to be formed, forming a trench penetrating the source region 14 and a base region 13 by etching the source region 14 and the base region 13 using the silicon oxide layer 25 as an etching mask, sequentially forming a gate insulation film and a gate electrode in the trench, forming a source electrode electrically connecting the source region 14 and the base region 13 after coating the gate electrode with an interlayer insulation film, and forming a drain electrode on an n type silicon carbide substrate 11. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
