发明名称 |
METHOD FOR REDUCING ASPECT RATIO DEPENDENT ETCHING IN TIME DIVISION MULTIPLEXED ETCH PROCESSES |
摘要 |
<p>The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.</p> |
申请公布号 |
EP1761947(B1) |
申请公布日期 |
2015.02.25 |
申请号 |
EP20050785494 |
申请日期 |
2005.06.23 |
申请人 |
UNAXIS USA INC. |
发明人 |
LAI, SHOULIANG;JOHNSON, DAVID;WESTERMAN,RUSSELL |
分类号 |
H01L21/3065;C23F1/00;G01L21/30;G01R31/00;H01L21/302;H01L21/306;H01L21/461;H01L21/66;H01L21/67 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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