Semiconductor device

摘要

Provided is a semiconductor device having a structure which can suppress a decrease in electrical characteristics, which becomes more significant with miniaturization. The semiconductor device includes a plurality of gate electrode layers separated from each other. One of the plurality of gate electrode layers includes a region which overlaps with a part of an oxide semiconductor layer, a part of a source electrode layer, and a part of a drain electrode layer. Another of the plurality of gate electrode layers overlaps with a part of an end portion of the oxide semiconductor layer. The length in the channel width direction of each of the source electrode layer and the drain electrode layer is shorter than that of the one of the plurality of gate electrode layers.

主权项

1. A semiconductor device comprising:
an oxide semiconductor layer over a substrate; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a gate insulating film over the oxide semiconductor layer, the source electrode layer, and the drain electrode layer; and a first gate electrode layer and a second gate electrode layer over the gate insulating film, wherein the first gate electrode layer and the second gate electrode layer are separated from each other, wherein the first gate electrode layer overlaps with the oxide semiconductor layer, the source electrode layer, and the drain electrode layer, wherein the second gate electrode layer overlaps with an end portion of the oxide semiconductor layer, and wherein a length of each of the source electrode layer and the drain electrode layer in a channel width direction is shorter than a length of the first gate electrode layer in the channel width direction.