发明名称 Semiconductor optical integrated device
摘要 A semiconductor optical integrated device includes a substrate having a main surface with a first and second regions arranged along a waveguiding direction; a gain region including a first cladding layer, an active layer, and a second cladding layer arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer. The substrate includes a through hole extending from a back surface of the substrate in the thickness direction and reaching the first region. A metal member is arranged in the through hole. The metal member extends from the back surface of the substrate in the thickness direction and is in contact with the first cladding layer.
申请公布号 US8964809(B2) 申请公布日期 2015.02.24
申请号 US201213597375 申请日期 2012.08.29
申请人 Sumitomo Electric Industies, Ltd 发明人 Yoneda Yoshihiro;Yanagisawa Masaki;Koyama Kenji;Kobayashi Hirohiko;Hiratsuka Kenji
分类号 H01S5/00;H01S5/024;H01S5/026;H01S5/06;H01S5/227;H01S5/042;H01S5/0625;H01S5/343;H01S5/20 主分类号 H01S5/00
代理机构 Smith, Gambrell & Russell LLP 代理人 Smith, Gambrell & Russell LLP
主权项 1. A semiconductor optical integrated device comprising: a substrate having a main surface including a first region and a second region arranged along a waveguiding direction; a metal film arranged on a back surface of the substrate; a gain region including a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type arranged on the first region of the main surface; and a wavelength control region including a third cladding layer, an optical waveguide layer, and a fourth cladding layer arranged on the second region of the main surface and including a heater arranged along the optical waveguide layer, wherein the substrate includes a through hole that extends from the back surface of the substrate in the thickness direction and that reaches the first region of the main surface, a metal member is arranged in the through hole, the metal member extending from the back surface of the substrate in the thickness direction and being in contact with the first cladding layer, and the metal film has an opening formed in a region superimposed on the second region when viewed from the thickness direction of the substrate.
地址 Osaka JP