Methods of forming metal silicide-comprising material and methods of forming metal silicide-comprising contacts

摘要

A method of forming metal silicide-comprising material includes forming a substrate which includes a first stack having second metal over first metal over silicon and a second stack having second metal over silicon. The first and second metals are of different compositions. The substrate is subjected to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack. The first metal between the second metal and the silicon in the first stack precludes formation of a silicide comprising the second metal and silicon from the first stack. After forming the metal silicide-comprising material, the first metal, the second metal and the metal silicide-comprising material are subjected to an etching chemistry that etches at least some remaining of the first and second metals from the substrate selectively relative to the metal silicide-comprising material.

主权项

1. A method of forming metal silicide-comprising material, comprising:
forming a substrate comprising a first stack comprising second metal over first metal over silicon and a second stack comprising second metal over silicon, the first and second metals being of different compositions, there being none of the first metal in the second stack; and subjecting the substrate to conditions which react the second metal with the silicon in the second stack to form metal silicide-comprising material from the second stack, the first metal between the second metal and the silicon in the first stack precluding formation of a silicide comprising the second metal and silicon from the first stack.