发明名称 |
Hybrid STI gap-filling approach |
摘要 |
A method of forming an integrated circuit structure includes providing a semiconductor substrate including a top surface; forming an opening extending from the top surface into the semiconductor substrate; and performing a first deposition step to fill a first dielectric material into the opening. The first dielectric material is then recessed. A second deposition step is performed to fill a remaining portion of the opening with a second dielectric material. The second dielectric material is denser than the first dielectric material. The second dielectric material is recessed until a top surface of the second dielectric material is lower than the top surface of the semiconductor substrate. |
申请公布号 |
US8319311(B2) |
申请公布日期 |
2012.11.27 |
申请号 |
US20100688939 |
申请日期 |
2010.01.18 |
申请人 |
CHEN NENG-KUO;TSAI CHENG-YUAN;TZENG KUO-HWA;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHEN NENG-KUO;TSAI CHENG-YUAN;TZENG KUO-HWA |
分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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