Plant and method for producing a semiconductor film

摘要

The plant is suitable to produce a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case (1) embedding a chamber (2) divided into one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (5). To the deposition zone (2a) a magnetron device (7) is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (α) of the cylindrical member that is in the deposition zone (2a). To the evaporation zone (2b) a cell (10) for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone (2b) houses a substrate (8a) on which the film (8) is produced. The cylindrical member (4) is provided with heating means of a portion of the side surface thereof that is from time to time in the evaporation zone (2b), so that the elements of the groups 11 and 13 previously deposited on this surface evaporate and deposit on the substrate (8a) together with the at least one element of the group 16 forming the film (8).

主权项

1. A plant for producing a semiconductor film (8) having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements, said plant comprising:
an outer case (1) embedding a chamber (2) divided into at least one deposition zone (2a) and one evaporation zone (2b), which are separated by a screen (3) interrupted by at least one cylindrical transfer member provided with actuation means for rotation about its own axis (5), at least one magnetron device (7) being associated to said deposition zone (2a), for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (α) of the at least one cylindrical transfer member that is in the deposition zone (2a), at least a cell (10) for the evaporation of at least one element of the group 16 being associated to said evaporation zone (2b), and said evaporation zone (2b) housing a substrate (8a) on which said film (8) is produced, and said at least one cylindrical transfer member (4) being provided with heating means of a portion of the side surface thereof that is from time to time in the evaporation zone (2b), so that the elements of the groups 11 and 13 previously deposited on said surface evaporate and deposit on said substrate (8a) together with the at least one element of the group 16 forming said film (8).