| 摘要 |
<p>The purpose of the present invention is to provide a memory for testing whether an operation of preventing an error caused by word line disturbance is normally performed, a memory system including the same, and a method for operating the memory. The memory includes a plurality of word lines to which one or more memory cells are connected; and a control unit configured to sequentially activate and pre-charge a plurality of word lines during a refresh operation, activate and pre-charge a word line that is selected based on an address of a high-activated word line during a target refresh operation, wherein the high-activated word line is a word line which satisfies one or more of a case that the number of activations is greater than or equal to a reference number, and a case that the frequency of activations is greater than or equal to a reference frequency, among the word lines. Also, the control unit is configured to write test data to one or more first memory cells connected to the word line that is selected based on the address of the high-activated word line during the target refresh operation in a test mode.</p> |
